THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A thin film transistor and a method for fabricating the thin film transistor are provided to simplify the manufacturing process of the thin film transistor by forming the offset area and source/drain area through the self align process without using a mask. CONSTITUTION: An insulation layer(22) is formed on two areas which are defined on a semiconductor substrate(21). A body poly layer(23) is formed on the semiconductor substrate(21). The body poly layer(23) has a drain formed on a higher insulation layer, an offset area which is formed on a side of the higher insulation layer, a channel area which is formed on a lower insulation layer and a source which is aligned in the channel area. A gate oxide film is formed on the channel area of the body poly layer(23). A gate electrode layer(30) is formed on the channel area of the body poly layer(23).