METHOD OF FORMING THIN WIRING FILM FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming a thin wiring film for semiconductor device is provided which is capable of improving the reflectivity and step coverage of the thin wiring film by depositing the thin wiring film using CVD and plasma methods in fabrication process of the semiconductor device. CONSTITUTION: A method comprises steps of: forming the first thin wiring film on the top of the semiconductor substrate by CVD process and then forming the second thin wiring film on the first thin wiring film by CVD process on the condition that power had been supplied to a plasma electrode; and forming the first thin wiring film on the top of the semiconductor substrate by CVD process, treating the surface of the first thin wiring film by plasma of the vapor deposition reactive promotion gas, and then forming the second thin wiring film on the first thin wiring film by CVD process.