| 摘要 |
PURPOSE: A storage capacitor of thin film transistor photo sensor and method thereof are provided to improve a storage capacitance of photo sensor without additional mask and process. CONSTITUTION: A substrate(30) is defined by a photosensitive region(A), a storage region(B) and a switching region(C). By depositing a conductive metal on the substrate(30) and patterning, a sensor gate(32a), a first storage electrode(32b) and a switch gate(32c) are simultaneously formed. Then, a first insulating layer(34) is formed on the resultant structure. Also, by depositing a conductive metal and patterning, a sensor drain and source(38a,38b) overlapped to a sensor semiconductor layer(36a) and a second storage electrode(38c) are simultaneously formed. A second insulating layer(40) is formed on the resultant structure. By etching the first and second insulating layers(34,40), a first contact hole(42) to expose the first storage electrode(32b) is formed. Then, a third storage electrode(44a) is formed on the second insulating layer of the storage region(B), and a light shielding layer(44b) is formed on the switching region(C).
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