发明名称 BOOSTING CIRCUIT AND DRIVING METHOD THEREOF
摘要 PURPOSE: A boosting circuit and its driving method are provided to sufficiently compensate a boosted voltage through a memory device is operated in a mode except a normal mode. CONSTITUTION: A control signal is inputted to a first generating unit of pulse(60) when a memory device is operated in a mode except a normal mode. A first pulse having a pulse width corresponding to a first delay time and delayed as a second delay time from a rising edge of control signal is generated by replying the control signal. A second pulse having a pulse width corresponding to a third delay time and delayed as a fourth delayed time from a rising edge of first pulse is generated by replying the first pulse. A second pumping enable signal composed of the first and the second pulses having certain delay times is generated by inputting the first and the second pulses into a logical unit(90) and logically summing. A voltage level is compensated to a boosting level with performing a pumping operation by the second pumping enable signal.
申请公布号 KR20000040533(A) 申请公布日期 2000.07.05
申请号 KR19980056193 申请日期 1998.12.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YUN, SE SEUNG;HWANG, HYEONG RYEOL
分类号 G11C5/14;(IPC1-7):G11C5/14 主分类号 G11C5/14
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