发明名称 |
BOOSTING CIRCUIT AND DRIVING METHOD THEREOF |
摘要 |
PURPOSE: A boosting circuit and its driving method are provided to sufficiently compensate a boosted voltage through a memory device is operated in a mode except a normal mode. CONSTITUTION: A control signal is inputted to a first generating unit of pulse(60) when a memory device is operated in a mode except a normal mode. A first pulse having a pulse width corresponding to a first delay time and delayed as a second delay time from a rising edge of control signal is generated by replying the control signal. A second pulse having a pulse width corresponding to a third delay time and delayed as a fourth delayed time from a rising edge of first pulse is generated by replying the first pulse. A second pumping enable signal composed of the first and the second pulses having certain delay times is generated by inputting the first and the second pulses into a logical unit(90) and logically summing. A voltage level is compensated to a boosting level with performing a pumping operation by the second pumping enable signal.
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申请公布号 |
KR20000040533(A) |
申请公布日期 |
2000.07.05 |
申请号 |
KR19980056193 |
申请日期 |
1998.12.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YUN, SE SEUNG;HWANG, HYEONG RYEOL |
分类号 |
G11C5/14;(IPC1-7):G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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