| 摘要 |
PURPOSE: A method for manufacturing thin film transistor substrate for liquid crystal display device using 4 masks and a thin film transistor substrate for liquid crystal display device are provided to manufacture the thin film transistor substrate using 4 masks in order to reduce cost. CONSTITUTION: A method for manufacturing thin film transistor substrate for liquid crystal display device using 4 masks includes first thru sixth steps. At the first step, gate lines(20), common lines(11), and pixel electrodes(21) are formed on a substrate using first masks. At the second step, a gate dielectric film(30), a semiconductor layer(40), a doped amorphous silicon layer(40) and a data conduction layer(60) are accumulated sequentially on the gate lines(20), common lines(11) and pixel electrodes(21). At the third step, pixel signal lines are formed on the pixel electrodes. At the forth step, the doped amorphous silicon layer(40) is etched. At the fifth step, a preservation layer is accumulated. At the sixth step, an aperture is formed by patterning the preservation layer, the semiconductor layer and the gate dielectric layer.
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