发明名称 LOCAL CLOCK SIGNAL GENERATING CIRCUIT AND METHOD, INTERNAL CLOCK SIGNAL GENERATING CIRCUIT AND METHOD, AND SEMICONDUCTOR MEMORY DEVICE USING THEM
摘要 PURPOSE: A local clock signal generating circuit and method, an internal clock signal generating circuit and method, and a semiconductor memory device using them are provided to generate a plurality of local signals without phase difference from internal clock signals and generate stable internal clock signals without relation to shift in noise. CONSTITUTION: A local clock signal generating circuit comprises an internal clock signal generating circuit(100) generating clock signals synchronized to outer clock signals, clock lines(130) transferring the internal clock signals, a local clock signal generating circuit(110), plural internal circuits(120-128) operated in response to corresponding local clock signals and plural phase mixers(110a-110i). The phase mixers receive and combine signals of two points on the clock line to generate the local clock signals.
申请公布号 KR20000040542(A) 申请公布日期 2000.07.05
申请号 KR19980056203 申请日期 1998.12.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, DONG YUN
分类号 G06F1/10;G06F1/12;G11C7/22;G11C11/407;H03K3/00;(IPC1-7):H03K3/00 主分类号 G06F1/10
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