ION IMPLANTING APPARATUS FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: An ion implanting apparatus used for manufacturing a semiconductor device is provided to prevent a wafer from being contaminated by forming an ion implanting pattern without performing a photoresist coating process, an exposure process and a developing process. CONSTITUTION: An ion generated from an ion generator(101) is accelerated by passing through an ion accelerator(102) and an ion analyzer(103). The ion is doped on a wafer(108) loaded on a wafer holder(107) which is rotated in a process chamber(105). A transmitting section for selectively transmitting the ion is formed in an ion moving route(104). A heating section heats the wafer holder(107) on which the wafer(108) is loaded. An impurity doping is carried by implanting the impurities onto the wafer(108). At this time, the wafer(108) is heat-treated by the heater.