METHOD FOR MANUFACTURING A PLUG OF SEMICONDUCTOR MEMORY

摘要

PURPOSE: A plug formation method is provided to prevent a void generated in contact hole and cleaning processes by using double insulating layers without using nitride spacers. CONSTITUTION: Double insulating layers(3,6) are deposited on a substrate(1) having MOS transistors. The double insulating layers deposition steps further comprises the steps of depositing a first insulating layer(3) on the MOS transistor and etching an upper portion of the first insulating layer(3) located between gates of the MOS transistor, wherein the upper portion of the first insulating layer(3) is a void generation region; and depositing a second insulating layer(6) on the etched first insulating layer(3). Then, a contact hole for exposing a drain region of the MOS transistor is formed. A plug(5) is filled into the contact hole.