发明名称 DEVICE FOR GENERATING AND DETECTING LEVEL OF INTERNAL POWER IN DRAM
摘要 PURPOSE: A device for generating and detecting a level of an internal power in a DRAM is provided to minimize power consumption by a power circuit in a stand-by mode and to supply a uniform power in the entire chip when many internal power generators and many level sensors are existed for the same internal power. CONSTITUTION: An operation to supply power inside a chip or to sense a level of the power is performed by enabling every internal power generators(10) and every level sensors(11). The internal power generator(10) and the level sensor(11) located in the middle are enabled in standby. Sequentially, the internal power generator(10) and the level sensor(11) between a first and a third banks(BANK1)(BANK3) located in the left side of the chip are operated. Next, internal power generator(10) and the level sensor(11) located in the middle of the chip are operated. And then internal power generator(10) and the level sensor(11) between a second and a fourth banks(BANK2)(BANK4) located in the right side of the chip are operated. The internal power generator(10) and the level sensor(11) are repeatedly enabled.
申请公布号 KR20000037986(A) 申请公布日期 2000.07.05
申请号 KR19980052824 申请日期 1998.12.03
申请人 HYUNDAI MICRO ELECTRONICS CO., LTD. 发明人 KIM, DAE UK
分类号 G11C11/407;(IPC1-7):G11C11/407 主分类号 G11C11/407
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