METHOD FOR FORMING CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a contact of a semiconductor device is provided to ensure a process margin of the contact by forming field oxide film after forming a trench having a barrier film therein. CONSTITUTION: A trench defining an active area and a field area is formed on a semiconductor substrate(30). A barrier film(33) is formed in the trench. A field insulation film(34) is formed on the barrier film(33) such that the trench is filled with the field insulation film(34). A MOS transistor having an impurity diffusing area is formed in the active area. Then, an inter layer insulation film(41) is formed on the semiconductor substrate(30). A contact hole is formed by removing the predetermined portion of the inter layer insulation film(41). Some portion of the impurity diffusing area and the barrier film(33) are exposed by the contact hole.