METHOD OF FORMING MULTILAYER GATE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming multilayer gate electrode of a semiconductor device is provided to prevent a generation of void within polysilicon layers for the heat treatment process after patterning the multilayer gate electrode. CONSTITUTION: A method comprises the steps of: dividing a substrate(100) into activated and inactivated parts by a field oxide layer(102); forming a gate insulation film(104), a polysilicon layer(106), and a first insulation film(108) on the semiconductor substrate(102); etching the first insulation film(108) with CMP(chemical mechanical polishing) so as to leaving the first insulation film on the active region only; forming a metal silicide layer on the resultant; and forming the multilayer gate electrode and polysilicon layer sequentially after etching the first insulation film(108). Thereby, it is possible to suppress a reaction between the metal silicide layer and the polysilicon layer, for the later heat treatment process, and to prevent a generation of the void within the polysilicon layer.