| 摘要 |
PURPOSE: A semiconductor device and a method for fabricating a thin film transistor are provided to improve the reliance of the semiconductor device by reducing the damage of elements caused by a photoresist film. CONSTITUTION: A semiconductor substrate(1) is prepared. An amorphous silicon(54) is deposited on the semiconductor substrate(1). A multi crystalline silicon(52) is formed on the semiconductor substrate(1) by crystallizing the amorphous silicon(54). A doping block is deposited on the multi crystalline silicon(52). The doping block is made of a semiconductor material. Then, a photoresist(PR) is coated on the amorphous silicon(54). The photoresist(PR) is then subjected to a patterning process. When the photoresist(PR) is patterned, the doping block is also patterned.
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