ISOLATION REGION FORMATION OF SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A method of forming an isolation region of a semiconductor substrate is provided in order that a gap filling may be obtained easily through rounding the semiconductor substrate where is on the top corner in an active region, when forming the isolation films by using the trench of profiled groove isolation structure. CONSTITUTION: A method of forming an isolation region of a semiconductor substrate contains the following steps: a step to form the first and the second dielectric layers on the semiconductor substrate; a step to remove the second dielectric layer of an isolation region by defining the isolation films; a step to form an oxide layers by oxidizing the first dielectric layers in the isolation region; a step to form a side wall spacers on the sides of the second dielectric layers in the isolation region; a step to form a trench by etching the oxide layer and the semiconductor substrate in the isolation region, and to remove the side wall spacers; and a step to form the third dielectric layers on the surface of the semiconductor substrate which the trench has been formed thereon.