| 摘要 |
A bi-directional transistor structure is provided, which can help solve the problem of degraded performance due to hot carrier injection (HCI) effect that is otherwise prominent in conventional bi-directional transistors. This bi-directional transistor structure includes the following: a first diode element whose negative end is connected to the first I/O port and whose positive end is connected to a first node; a first MOS transistor element whose first source/drain electrode is connected to the first node connected to the positive end of the first diode element, whose second source/drain electrode is connected to the second I/O port and whose gate is connected to a second node; a second diode element whose negative end is connected to the second I/O port and whose positive end is connected to a third node; and a second MOS transistor element whose first source/drain electrode is connected to the first I/O port, whose second source/drain electrode is connected to the third node connected to the positive end of the second diode element and whose gate is connected to the second node connected to the gate of the first MOS transistor element. In the foregoing bi-directional transistor structure, the first and second MOS transistor elements can be either NMOS transistors or PMOS transistors. This bi-directional transistor structure has an advantage over the prior art since two different routes are provided for the directional operations, which can help prevent the unsymmetrical HCI effect.
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