| 摘要 |
A gate dielectric film 102, gates 104a formed of polysilicon, an offset oxidation film 106a formed of silicon nitride, and an etching stopper nitride film 108a formed of silicon nitride are sequentially formed on a silicon substrate 100, and side walls 110 formed of silicon nitride are formed on side surfaces of the offset oxidation film 106a and the etching stopper nitride film 108a. Since an oxidation polysilicon film 112 having better insulating characteristics than silicon nitride is formed on the side surfaces of the gates 14a by oxidation processing, the cross sectional thickness of the oxidation polysilicon film 112 can be made thin. A sum value of two times the cross sectional width of the etching stopper nitride film 108a and the cross sectional width of the side walls 110 is larger than the cross sectional width of the gates 104a, and the gates 104a are not etched when forming contact holes 116.
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