| 摘要 |
PROBLEM TO BE SOLVED: To reduce collector resistance by forming a nearly L-shaped or U-shaped mask on a semiconductor layer, introducing first and second conductive-type impurities to the outside, diffusing them in the direction of the inside of a surface for forming below the first mask, and forming a second mask on the semiconductor layer so that the second mask orthogonally crosses it. SOLUTION: A first pattern is in nearly an L shape, and the boundary line of a second pattern nearly vertically crosses the boundary line of the first pattern. A junction A between an emitter region and a genuine base region is formed on the side wall of the first pattern in self-alignment manner, thus reducing the influence of an electric field in a direction that is vertical to a junction B between a base extraction region and a collector region, relaxing the concentration of an electron current in the collector region, and reducing collector resistance. Also, although the base extraction region is formed outside a second pattern, parts where the first and second patterns cross are vertical each other and the parasitic capacity between the base extraction region and the collector region can be minimized.
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