Method of etching gallium-nitride based compound semiconductor layer and method of manufacturing semiconductor light emitting device utilizing the same

摘要

A GaN-based compound semiconductor layer is formed on a substrate. An etch mask of a Ti film is formed on a surface of said gallium-nitride based compound semiconductor. The gallium-nitride based compound semiconductor is selectively etched through an opening of said etch mask. With this method, even where the semiconductor is difficult to etch, it is possible to efficiently etch the semiconductor vertically relative to a surface thereof by once forming a mask without troubles such as stripping-off of a mask. If the etch mask uses a metal film easy to oxidize to perform etching on the semiconductor layer while supplying an oxidizing source, the selective etch ratio can be further increased, enabling etching by a thin etch film.