| 摘要 |
A four-layer low voltage thyristor device (30) in which the breakover voltage is independent of the holding current. Rather than forming a buried region (38) underlying the emitter region (42), the buried region 38 is formed laterally to the side of the emitter (42). In order to form a low breakover voltage device, the buried region (38) is required to be highly doped, but the resulting junction (40) does not approach the emitter junction (48). A low breakover voltage (5 V-12-V) thyristor can thus be realized.
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