发明名称 |
SPUTTERING DEVICE AND METHOD |
摘要 |
PROBLEM TO BE SOLVED: To prevent a film-formed substrate and a peripheral tool from being melted or film formation failure from occurring due to an excessive temperature increase by suppressing inflow current density to the film-formed substrate and the surface of a substrate-placement stand for placing the film-formed substrate to a specific value or less. SOLUTION: A treatment chamber 101 is grounded and an anode shield plate 401 that also plays a role of an adhesion-proof plate that is arranged while surrounding the side wall of a target is also grounded. Also, a voltage Vs is applied from a power supply 404 to a placement stand 105 of a film- formed substrate 403 that opposes the surface of a target 102 and a bottom adhesion-proof shield plate 402 that attaches to the placement stand 105, and the voltage Vs is at a negative potential. The negative potential becomes the barrier of electrons from the target 102 to prevent electrons from entering the substrate 403 and the bottom adhesion-proof plate 402. In this case, the inflow current density to the surface of the film-formed substrate 403 and the film-formed substrate placement stand 5 is suppressed to a specific value or less. Preferably, the potential of the substrate placement stand 5 is retained at -10 V--20 V.
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申请公布号 |
JP2000188265(A) |
申请公布日期 |
2000.07.04 |
申请号 |
JP19980364067 |
申请日期 |
1998.12.22 |
申请人 |
HITACHI LTD;HITACHI TOKYO ELECTRONICS CO LTD |
发明人 |
YAJIMA AKIRA;KOBAYASHI HIDE;NAKAJIMA TAKASHI;NISHIHARA SHINJI;UCHIDA JUNICHI |
分类号 |
C23C14/35;H01L21/285;(IPC1-7):H01L21/285 |
主分类号 |
C23C14/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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