| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory in which replacement efficiency when a defective memory cell is replaced by a redundant memory cell and redundancy selecting speed when a redundant memory cell is selected can be selectively changed. SOLUTION: This device is provided with the redundancy discriminating circuits 1410, 2410 for discriminating plural redundant selection signals XRED0, XRED1, XRED2, XRED3 outputted from the plural replacement address programing circuits 400, 401, 402, 403 by wired logic, and the redundancy selecting signal encoders 1420, 2420 for encoding and outputting the redundancy selecting signals XRED0, XRED1, XRED2, XRED3 by wired logic, and fuses F410, F420, F421 for varying the length of each signal line XRDNB, RXDS0, RXDS1 in which wired logic is adopted in order to enable changing the replacement efficiency and redundancy selecting speed. A switch circuit constituted by transistors may be used instead of fuses.
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