| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, capable of securing capacitance value, without depending on an applied voltage and further reducing manufacturing cost. SOLUTION: A groove 7 is formed in a first interlayer insulating film 5, and in a first metal layer 8 is formed on the first interlayer insulating film 5, and a capacitance insulating layer 9 is formed on the first metal layer 8, and a second metal layer 10 is then formed on the capacitance insulating layer. Thereby, the groove 7 is embedded with the first metal layer 8, the capacitance insulating layer 9, and the second metal layer 10, and the second metal layer 10 and the capacitance insulating layer 9 are etched back until the surface of the first metal layer 8 is exposed to form an upper electrode and a capacitance insulating film. The first metal layer 8 is then patterned to form a lower electrode, and a capacitor is formed. |
