| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability by forming an Si3N4 film on an interface between a wiring whose main material is Cu and polyimide resin covering the wiring, preventing reaction of imide resin before curing with Cu, and covering a metal post and side surfaces of a thin film layer of Cu with Si3N4. SOLUTION: A photoresist PR2 is formed from which a wiring layer 7 corresponding to a region, on which a metal post is to be formed, is exposed, and a metal post 8 of Cu is formed on the exposed part by electrolytic plating. Since Cu 8, Ni 10 and Au 11 are continuously formed without leaving them for a long time, and oxidation of Cu and Ni can be prevented. After the photoresist PR2 is eliminated and a thin film layer 6 of Cu is eliminated by using the wiring layer 7 as a mask, an Si3N4 film SN is stuck on the whole surface containing the wiring layer 7 and the metal post 8 by a plasma CVD method. Since polyimide resin to be formed in a later process is active and reacts with Cu, the wiring layer 7 and the metal post 8 are wholly covered with the Si3N4 film. |
