| 摘要 |
PROBLEM TO BE SOLVED: To provide a positive photoresist composition superior in characteristics required for sensitivity and resolution and inner pattern profile dimensional stability from exposure process to heating process at the time of using far ultraviolet rays, especially, short wavelength light source, such as excimer laser beams. SOLUTION: The positive photoresist composition is characterized by containing (A) a resin comprising repeated structural units protected by acetal groups to be decomposed by action of acid increased in solubility in an alkaline solution, (B) a first photoacid-generator, (C) a second photoacid-generator higher than the first generator (B) in decomposition efficiency, (D) a acid-decomposable dissolution preventer low in molecular weight, (E) an organic basic compound equivalent to 0.75-1.3 mol/n per 1 mol of (C), where (n) is the number of basic groups of the organic basic compound molecular. |
