Method for fabricating a capacitor in a dynamic random access memory

摘要

The invention is a method for fabricating a capacitor in a dynamic random access memory. The capacitor has double cylinder structure and is fabricated by utilizing an insulating side wall spacer to pre-define the capacitor structure. Then, a wet etching process is applied to remove the insulating side wall spacer and expose a surface of a structured lower electrode. Then, a dielectric thin film and an upper electrode are formed over the surface of the lower electrode sequentially to form the capacitor.