发明名称 |
Plasma etch apparatus with heated scavenging surfaces |
摘要 |
The invention is embodied in a method of operating a plasma etch reactor, consisting of introducing a gas into the reactor which disassociates as a plasma into an etch species which etches oxide films on a work piece in the reactor and a non-etching species combinable with the etch species into an etch-preventing polymer condensable onto the work piece below a characteristic deposition temperature, providing an interior wall comprising a material which scavenges the etching species, and maintaining a temperature of the interior wall above the deposition temperature.
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申请公布号 |
US6083412(A) |
申请公布日期 |
2000.07.04 |
申请号 |
US19980003867 |
申请日期 |
1998.01.07 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
RICE, MICHAEL;MARKS, JEFFREY;GROECHEL, DAVID W;BRIGHT, NICOLAS J |
分类号 |
C23F4/00;B44C1/22;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):B44C1/22 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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