| 摘要 |
PROBLEM TO BE SOLVED: To realize a highly efficient quantum dot device which reflects narrow state density of quantum dot by forming a semiconductor quantum dot structure with highly uniform size distribution. SOLUTION: InAs dot formed by using strain relaxation on a GaAs layer is buried in a GaAs film 4 to a thickness not more than a thickness of dot thickness. InGaAs is formed to a layer t fill a hole formed by removing the dot by thermal etching. A surface is thereby flat and an InGaAs quantum dot 5 of uniform thickness is formed in a hole part at high density by forming InGaAs to a layer at least to a depth of a hole. A quantum dot laser which oscillates at a low threshold value current, for example, is realized by preparing a quantum dot device by using the quantum dot 5. |
