发明名称 PRESSURE SENSOR CIRCUIT
摘要 PROBLEM TO BE SOLVED: To reduce temperature fluctuation components both in a primary degree and in a seconary degree caused by the sensitivity temperature characteristic of a semiconductor sensor. SOLUTION: This pressure sensor circuit is provided with a band gap reference circuit 20 of a linear negative temperature characteristic, a comparator 21 connected with an output terminal of the reference circuit 20 and a non- inverting input terminal, a temperature sensing resistance TR having a linear positive temperature characteristic and connected between an output terminal of the comparator 21 and its inversion input terminal, a resistance R20 connected between the inversion input terminal of the comparator 21 and the ground, and a semiconductor pressure sensor of a bridge circuit constitution connected between the output terminal of the comparator 21 and its inversion input terminal.
申请公布号 JP2000186970(A) 申请公布日期 2000.07.04
申请号 JP19980363952 申请日期 1998.12.22
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 HAYASHI MASANORI;KONISHI YASUJI;FUJIMURA TOSHIO
分类号 G01L9/04;G01L9/00;G01L19/04;(IPC1-7):G01L9/04 主分类号 G01L9/04
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