| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor which can suppress deterioration of hot carrier resistance and has a gate electrode, having a gate length of not larger than 0.2μm, and to provide a semiconductor storage device, and the manufacture method. SOLUTION: A field effect transistor, provided with a gate electrode having a gate length of not more than 0.2μm, is provided with a substrate 1, a gate insulating film 2 and a gate electrode 6. The gate insulating film 2 is formed on the substrate 1 and has an upper surface. The gate electrode 6 is formed on the gate insulating film 2 and has a sidewall surface. An angleαwhich is made by the sidewall face and the upper surface is not less than 80 degrees.
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