发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To improve the reliability of a solder bump by forming the barrier layer at a metal post exposed from an insulating resin layer made of a thermosetting resin, in which the main surface around the metal post can be lower in height than the head of the metal post, thereby making the film thickness and shape of the barrier layer highly accurate. SOLUTION: When Si3N4 is formed after a metal post 8 has been farmed, an area including an interconnection layer 7 and the post 8 can be covered. Further, a side surface M which has been patterned and thus exposed is also required to be protected together. Successively, a resin layer R is applied to the entire surface. The resin is of a type which is initially fluid but whose film thickness is largely reduced when a thermosetting reaction is terminated. Due to its fluidity, this resin can provide flatness before being cured, and further, due to its reduced thickness, this resin layer is lower in height than the head of the post 8. As a result, larger bubbles than the film thickness break, and small bubbles are caused to be repelled outside together with the resin by a centrifugal force derived from spin-on.</p>
申请公布号 JP2000188357(A) 申请公布日期 2000.07.04
申请号 JP19980364238 申请日期 1998.12.22
申请人 SANYO ELECTRIC CO LTD 发明人 TOKUSHIGE TOSHIMICHI;TAKAI NOBUYUKI;SHINOKI HIROYUKI
分类号 H01L23/52;H01L21/3205;H01L21/60;H01L23/12;(IPC1-7):H01L23/12;H01L21/320 主分类号 H01L23/52
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