PRODUCTION OF OPTICAL SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To improve the flatness of a semiconductor optical waveguide directly formed by MOVPE selective growth and to obtain good crystallinity by impulsively executing the supply of the raw materials in selective metal organic vapor phase growth. SOLUTION: The supply of the raw materials is intermittently (impulsively) executed in the crystal growth method of directly forming the semiconductor optical waveguide by the MOVPE selective growth method. In the case of the MOVPE selective growth of a III-V compound layer, the growth temperature is 600 to 700 deg.C and a growth pressure is 30 to 1000 hPa and organic group V raw materials of hydrides, such as ASH3 and PH3, are used as the group V raw materials and organic metal raw materials are used as the group III raw materials. The pulse growth method continuously supplies the group V raw materials and, on the other hand, supplies the group III raw materials in the amount corresponding to monatomic layer per pulse and sets the standby time for >=1 second. The supply of the raw materials is impulsively executed in the manner described above, by which the migration of the raw material species on the growth substrate surface is accelerated and the flat optical waveguide structure may be embodies.