| 摘要 |
PROBLEM TO BE SOLVED: To increase the degree of freedom of isotropic etching by constituting an interlayer insulating film by forming a first silicon oxide film by causing a silicon compound and hydrogen peroxide to react with each other by the CVD method and forming a second silicon oxide film which becomes a cap layer on the first silicon oxide film. SOLUTION: A third silicon oxide film 40 is formed by causing tetraethoxysilane and oxygen to react with each other by the plasma CVD method. Then, under a reduced pressure, a first silicon oxide film 42 is formed by causing SiH4 and H2O2 to react with each other by the CVD method by using a nitrogen gas as a carrier. The silicon oxide film 42 has a film thickness larger than at least the step of the underlying third silicon oxide film 40. After the moisture in the first silicon oxide film 42 is removed more or less, a second silicon oxide film 44 is successively formed by causing gasses to react with each other under the presence of SiH4, PH3, and N2O by the plasma CVD method.
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