| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacture method of a semiconductor device, which solves the drop of the moving degree of electrons due to the infiltration of implanted ions into a channel in a conduction channel generated through the use of the implantation of focused ion beams and has a transmission channel of high quality. SOLUTION: In this manufacture method of a semiconductor device, where a channel layer 24 is formed on a semiconductor substrate 26 with epitaxial growth, a semiconductor layer 25 is formed on the substrate (process 11), and ions left regions 27 are formed in the plural selected parts of the semiconductor layer 25 by ion plantation (process 12). The channel layer 24 is epitaxially grown on the semiconductor layer 25 (process 13), and a channel 29 in the channel layer 24 is narrowed by depletion regions 28 which are epitaxially grown on the regions 27.
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