发明名称 Front contact trenches for polycrystalline photovoltaic devices and semi-conductor devices with buried contacts
摘要 Textured semi-conductor devices, such as macro textured buried-contact solar cells, are produced with special front contact trenches to increase efficiency and decrease costs. In order to produce the front contact trenches, front channels and narrower metallization grooves are cut in the semi-conductor body. The front contact trenches are plated to form attractive conductive buried contacts comprising flush metallization fingers and bus bars.
申请公布号 US6084175(A) 申请公布日期 2000.07.04
申请号 US19950557286 申请日期 1995.11.14
申请人 AMOCO/ENRON SOLAR 发明人 PERRY, JAMES M.;NARAYANAN, SRINVASAMOHAN;WOHLGEMUTH, JOHN H.;RONCIN, STEVEN P.
分类号 H01L31/0224;H01L31/0236;H01L31/18;(IPC1-7):H01L31/06 主分类号 H01L31/0224
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