发明名称 |
Integrated circuit fabrication process |
摘要 |
A method of semiconductor circuit fabrication utilizing the poly buffered LOCOS process is disclosed. Amorphous silicon is desirably formed by the decomposition of disilane at temperatures between 400-525 DEG C. The amorphous silicon exhibits less pits than what is produced by conventional processes. The absence of pits contributes to eventual substrate integrity.
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申请公布号 |
US6083810(A) |
申请公布日期 |
2000.07.04 |
申请号 |
US19960761059 |
申请日期 |
1996.12.05 |
申请人 |
LUCENT TECHNOLOGIES |
发明人 |
OBENG, YAW SAMUEL;VITKAVAGE, SUSAN CLAY |
分类号 |
H01L21/32;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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