| 摘要 |
PROBLEM TO BE SOLVED: To facilitate etching without physically releasing an inorganic film and contaminating environment by using an etching liquid containing an oxidizer where an oxidization reduction potential can be specified and performing the wet etching of a film that is made of an inorganic matter on a substrate due to the oxidation reduction reaction where oxygen is involved. SOLUTION: The lamination structure of SrRuO film 12, BaSrTiOx film 13, and SrRuO film 14 is formed on a semiconductor substrate 11 by the CVD method. Then, a resist 21 is applied to an entire surface on the lamination structure, patterning is made by photo etching for forming an electrode, and the resist 21 at a region where no electrodes are formed is eliminated. Then, ozone water 4 is supplied to an area near the center of a substrate 1 to be treated so that the ozone water 4 is radiated from a nozzle head 2, the SrRuO film 14 is machined, and the resist 21 is eliminated by an oxygen plasma asher. In this case, to etch the SrRuO film 14, an oxidation reduction potential with at least 2 V is required.
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