| 摘要 |
PROBLEM TO BE SOLVED: To easily solve the diffusion phenomenon of boron punch through diffusion phenomenon by forming the gate electrode of an insulation gate field effect (MOS) transistor and then forming an intricate nitride layer on a P- channel MOS transistor so that hydrogen cannot enter the gate electrode. SOLUTION: An element separation region 2 is selectively formed at a specific region on a silicon substrate 1, a gate oxide film 3 is formed, and a gate electrode 4 is formed on it. Then, a spacer 5, a source/drain diffusion layer 6, and a cobalt silicide layer 7 are formed on the side wall, and the resistance of the source/drain layer 6 and the gate electrode 4 is reduced. And then, an amorphous silicon layer 8 is formed on an entire surface and is converted to an intricate nitride layer 9. Then, a silicon oxide film 10 is formed on an entire surface. The rejection force of hydrogen of the intricate nitride layer 9 is extremely high, thus completely preventing hydrogen being generated in the film formation process of the silicon nitride film 10 from entering the gate electrode 4 and drastically suppressing a boron punch through diffusion phenomenon.
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