发明名称 |
Transistor with local insulator structure |
摘要 |
A thin filmed fully-depleted silicon-on-insulator (SOI) metal oxide semiconductor field defect transistor (MOSFET) utilizes a local insulation structure. The local insulative structure includes a buried silicon dioxide region under the channel region. The MOSFET body thickness is very small and yet silicon available outside of the channel region and buried silicon dioxide region is available for sufficient depths of silicide in the source and drain regions. The buried silicon dioxide region can be formed by a trench isolation technique or a LOCOS technique.
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申请公布号 |
US6084271(A) |
申请公布日期 |
2000.07.04 |
申请号 |
US19980187892 |
申请日期 |
1998.11.06 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YU, BIN;LIN, MING-REN;PRAMANICK, SHEKHAR |
分类号 |
H01L21/336;H01L29/06;H01L29/78;(IPC1-7):H01L29/76;H01L29/94;H01L31/62;H01L31/113;H01L31/119 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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