发明名称 INSPECTION METHOD AND INSPECTION DEVICE FOR CIRCUIT PATTERN
摘要 PROBLEM TO BE SOLVED: To efficiently set inspection conditions and enhance reliability by irradiating large and small electron beams from large and small current mirror bodies having an electron gun, a lens system, and a deflecting system to a sample on a stage within a vacuum chamber, detecting and converting secondary charged particles produced, inspecting defects, and individually inspecting again defects with the large and small current mirror bodies. SOLUTION: Coarse alignment is conducted with an optical microscope, conditions of electron optics system are set, fine alignment of an image with electron beams are conducted, trial inspection is conducted, and image processing conditions are set. The whole surface of a wafer is inspected at high speed with an inspecting electron optics system 101, and defective places are displayed on a control screen. A defective coordinate part is moved to a visual field of a reviewing electron optics system 200 with low accelerating voltage and small chromatic aberration, and the truth or not of the defect is discriminated. In both inspections, threshold values of an image processing parameter are lowered, and inspection is repeated. Since image quality on a review screen is good, judgment of good or not of image processing parameter selection is correct, and the number of trial and errors is decreased.
申请公布号 JP2000188075(A) 申请公布日期 2000.07.04
申请号 JP19980364073 申请日期 1998.12.22
申请人 HITACHI LTD 发明人 SHINADA HIROYUKI;TAKATO ATSUKO;NINOMIYA TAKANORI;IWABUCHI HIROKO
分类号 H01J37/22;G01R31/302;H01J37/244;H01J37/252;H01J37/28;H01L21/66;(IPC1-7):H01J37/22 主分类号 H01J37/22
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