| 摘要 |
A magnetoresistive effect film is formed by laminating a plurality of magnetic thin films onto a substrate with an intervening non-magnetic thin film, an antiferromagnetic thin film being provided so as to neighbor to one of the ferromagnetic thin film via this intervening non-magnetic thin film. With the bias magnetic field applied to the antiferromagnetic thin film being Hr and the coercivity of the other ferromagnetic thin film being Hc2, the condition Hc2<Hr is satisfied. The antiferromagnetic thin film is made of either a cobalt oxide, a nickel oxide, or an a-phase ion oxide, or of an alloy of two or more of these materials, this being formed as a two-layer film.
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