| 摘要 |
A semiconductor laser device comprises a mesa structure selectively grown on a InP substrate, the mesa structure having a laser active layer and an optical guide layer, current blocking layer disposed on both sides of the mesa structure and an embedding layer formed on the optical guide layer. Each of the current blocking layer and embedding layer has a refractive index lower than the refractive index of the optical guide layer. The selective growth of the mesa structure changes the thickness and width of the optical guide layer in the opposite directions to cancel the change in the lasing wavelength caused by fabrication errors.
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