| 摘要 |
PROBLEM TO BE SOLVED: To provide an abrasive which is excellent in storage stability and can polish a surface flatly at a high speed without leaving a scratch on the surface by using a slurry containing cerium oxide and having a specified sulfate ion concentration. SOLUTION: This abrasive is a slurry containing cerium oxide preferably in an amount of 0.5-10 wt.% and sulfate ions in an amount of 5,000 mg or lower per kg of cerium oxide particles, Preferably, the abrasive further contains a dispersant and water as the medium, Preferably, at least one dispersant selected from among water-soluble organic polymers, water-soluble anionic surfactants, water-soluble nonionic surfactants, and water-soluble amines is used, preferably in an amount of 0.01-5 pts.wt. based on 100 pts.wt. cerium oxide particles. Preferably, the pH of the abrasive is adjusted to 7-10. The abrasive is useful for polishing a silicon oxide insulation layer on a semiconductor substrate.
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