Method and apparatus for increasing temperature uniformity of heated wafers

摘要

A method and apparatus are described for increasing the temperature uniformity of a wafer heated in a rapid thermal process (RTP) while the wafer is supported by a high emissivity structure in spaced relation above the head during the heating of the wafer; characterized in that a high-reflectivity ring, highly reflective to the radiation of the wafer, is provided on the head underlying the high emissivity ring.