| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is manufactured by cleaning a substrate to be cleaned without dissolving W, Ti, and TiN, even if the metallic materials are exposed on the surface of the substrate and a method for manufacturing the semiconductor device. SOLUTION: Impurities adhering to the surface of a silicon substrate 10 can be removed while the etching of a tungsten film 20 exposed on the surface of the substrate 10 is suppressed, when the substrate 10 is cleaned by dipping the substrate 10 in one or a plurality of liquid chemicals selected from among HF, HCl, and NH4OH, while the substrate 10 is completely covered with the tungsten film 20. After dry etching is performed for patterning the tungsten film 20 and a barrier metal 18, the impurities adhering to the surface of the substrate 10 can be removed, while the etching of the tungsten film 20 and barrier metal 18 exposed on the surface of the substrate 20 is suppressed, when the substrate 10 is cleaned by dipping the substrate 10 in either one or both of liquid chemicals, HCl and NH4OH.
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