发明名称 Semiconductor memory with transfer buffer structure
摘要 A plurality of sense amplifiers are provided between a plurality of memory cell arrays having a plurality of memory cells. These sense amplifiers are connected to bit lines of the respective memory cell arrays by array selection switches. Each of the sense amplifiers is connected to data lines by column switches. An array control portion is provided at each of the memory cell arrays. This array control portion selectively controls the array selection switches and column switches to transmit the data in an arbitrary memory cell in a memory cell array to the data lines through the sense amplifier.
申请公布号 US6084817(A) 申请公布日期 2000.07.04
申请号 US19990264928 申请日期 1999.03.09
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TODA, HARUKI
分类号 G11C5/02;G11C7/10;(IPC1-7):G11C8/00 主分类号 G11C5/02
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