| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where the trade-offs between breakdown voltage and on-resistance is improved, and provide the manufacture method thereof. SOLUTION: A semiconductor layer having a main surface 100a, a first conductivity-type first region 101 and a second conductivity-type second region 102, which form a first boundary 101a vertical with respect to the main surface 100a, and a second conductivity-type third region 103 which is detached from the second region 102, is formed in the first region 101 and is formed to a depth which is closer to the main surface 100a than the depth from the main surface 100a of the first boundary 101a, and a control electrode 201 which is formed on the main surface 100a, while being insulated from the main surface 100a from the second boundary 101b so that the first region 101 and the second region 102 formed in the first boundary region 101a are installed.
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