| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent generation of cracks and pinholes of an interlayer insulating film and to obtain high reliability by consisting of scanning lines and gate electrodes or reference signal lines of conductive materials of single layer or multiple layers and forming the sidewalls of the gate electrodes or reference signal lines so as to have a tapered shape of a specific angle. SOLUTION: Metal films of two-layered structures, composed of for example, tantalum nitride/tantalum are laminated on a pixel substrate 2 with a sputtering device, etc. When the two-layered structures composed of the tantalum nitride/ tantalum are etched by primary etching, the taper shapes of desired 10 to 30 deg. are obtained (d). Next, the metal films 10a are removed by executing secondary etching, with which the reference signal lines adjacent to the scanning lines 5 are formed. Consequently, the desired gently tapered shape of 10 to 30 deg. is obtained (e). A photoresistor 11 is removed (f), and a gate insulating film 12 is deposited (g). Then, the gate insulating film 12 can be disposed on the reference signal lines adjacent to the scanning lines 5 which have a tapered angle of 30 deg. or smaller.</p> |
