| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a structure in which the focusing margin of through-hole formation does not become small. SOLUTION: There is s shift in the position of a focusing margin between the formation of a 1st through-hole 12 and the formation of a 2nd through-hole owing to a step of an interlayer insulating film 10 due to the existence of a difference in the thickness of the interlayer insulating film 10. The area of the opening part of the 1st through-hole 12, however, is larger than the area of the opening part of the 2nd through-hole 14. Consequently, the focusing margin of the formation of the 1st through-hole 12 includes the focusing margin of the formation of the 2nd through-hole 14. The focusing margin of the formation of the 1st through-hole 12 and 2nd through-hole 14 turns into a focusing margin of the formation of the 2nd through-hole 14.
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