发明名称 Floating gate content addressable memory
摘要 A non-volatile storage device storing a data bit received from a bitline via an accessing circuit. A coupling circuit couples either the bitline, or a complementary bitline to a biasing circuit dependent on the logic level of the data bit stored in the storage device. The biasing circuit generates a match signal when a data bit having the same logic level as the stored data bit is applied to the bitline.
申请公布号 EP1014382(A1) 申请公布日期 2000.06.28
申请号 EP19990310029 申请日期 1999.12.13
申请人 STMICROELECTRONICS, INC. 发明人 CHAN, TSUI C.;NGUYEN, THI N.
分类号 G11C17/00;G11C15/04 主分类号 G11C17/00
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