发明名称 |
In-situ measurement method and apparatus for semiconductor processing |
摘要 |
<p>A measurement device for in-situ measurement of processing parameters, in accordance with the present invention, includes a semiconductor wafer having at least one processed chip formed thereon. The processed chip further includes at least one sensor for measuring process parameters. A memory storage device for storing the process parameters as the process parameters are measured by the at least one sensor is also included. A timing device is provided for tracking the process parameters as a function of time, and a power supply is included for providing power to the at least one sensor, the memory storage device and the timing device. Also, a method is described for making measurements with the measurement device. <IMAGE></p> |
申请公布号 |
EP1014437(A2) |
申请公布日期 |
2000.06.28 |
申请号 |
EP19990309084 |
申请日期 |
1999.11.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;INFINEON TECHNOLOGIES AG |
发明人 |
FLIETNER, BERTRAND;MULLER, K. PAUL |
分类号 |
H01L23/544;G05B19/00;G05D23/00;H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L23/544 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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