Nonvolatile semiconductor memory device and method of manufacturing the same

摘要

This invention relates to a nonvolatile semiconductor memory capable of electrically rewriting the data. A memory cell transistor formed in an element formation region in a semiconductor substrate (2) has a gate electrode structure including a source/drain diffused layer (9), a gate insulating film (5) formed on the element formation region, a floating gate (6), a gate-to-gate insulating film (7), and a control gate (8). A barrier insulating film (12) for suppressing excess etching is formed above the semiconductor substrate excluding the vicinity of the gate electrode structure. <IMAGE>